Raising the atomic-layer deposition temperature of Al2O3 and using HfO2 or poly-Si gates in SiMOS devices correlates with higher mobility and lower charge noise, yielding more stable quantum dots.
J.et al.Gate-defined quantum dots in intrinsic silicon.Nano Letters 7, 2051–2055 (2007)
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Gate Stack Engineering for High-Mobility and Low-Noise SiMOS Quantum Devices
Raising the atomic-layer deposition temperature of Al2O3 and using HfO2 or poly-Si gates in SiMOS devices correlates with higher mobility and lower charge noise, yielding more stable quantum dots.