Using first-principles phonon data and Monte Carlo transport simulations, the authors predict that a 40 nm SiC interlayer raises heat flow across the Si/Diamond interface by 46.6% by bridging mismatched phonon spectra.
Reducing interfacial thermal resistance by interlayer
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Enhancing interfacial thermal conductance in Si/Diamond heterostructures by phonon bridge
Using first-principles phonon data and Monte Carlo transport simulations, the authors predict that a 40 nm SiC interlayer raises heat flow across the Si/Diamond interface by 46.6% by bridging mismatched phonon spectra.