A 191 nm gate beta-Ga2O3 HFET reaches fT=32 GHz, fMAX=65 GHz, gm=110 mS/mm, and shows no current collapse after Al2O3 passivation.
Wang , author Q
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2025 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
High performance vacuum annealed beta-(AlxGa1-x)2O3/Ga2O3 HFET with f_T/f_MAX of 32/65 GHz
A 191 nm gate beta-Ga2O3 HFET reaches fT=32 GHz, fMAX=65 GHz, gm=110 mS/mm, and shows no current collapse after Al2O3 passivation.