VO2 films deposited at 425 °C on annealed TiO2(101) substrates grow in step-flow mode, retain atomic step-and-terrace structure, and show a sharp metal-insulator transition at ~325 K with ~10^3 resistance change.
Salluzzo , author J
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Atomically-Smooth Single-Crystalline VO$_2$ thin films with Bulk-like Metal-Insulator Transitions
VO2 films deposited at 425 °C on annealed TiO2(101) substrates grow in step-flow mode, retain atomic step-and-terrace structure, and show a sharp metal-insulator transition at ~325 K with ~10^3 resistance change.