Optimized Al0.8Ga0.2Sb/InAs quantum wells show 9.24e5 cm²/V·s mobility, 365,000% magnetoresistance, and a 12.93 effective g-factor, with SdH oscillations up to 30 K.
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Shubnikov-de Haas quantum oscillations with large spin splitting in highmobility Al0.8Ga0.2Sb/InAs/ Al0.8Ga0.2Sb quantum-well heterostructures
Optimized Al0.8Ga0.2Sb/InAs quantum wells show 9.24e5 cm²/V·s mobility, 365,000% magnetoresistance, and a 12.93 effective g-factor, with SdH oscillations up to 30 K.