A sputtering-based process creates a 0.5 nm silicide template on Si(111) that enables low-resistance, high-quality GaN epitaxial films suitable for vertical power devices and micro-LEDs.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
An Advanced Epitaxial Strategy Enabling Vertical GaN Devices on Silicon Wafers
A sputtering-based process creates a 0.5 nm silicide template on Si(111) that enables low-resistance, high-quality GaN epitaxial films suitable for vertical power devices and micro-LEDs.