A new microscopic model maps quantum dot device geometry directly to flopping-mode qubit parameters, reveals a tradeoff between fast electric driving and clean Rabi oscillations, and derives exchange coupling for capacitively coupled qubits.
Title resolution pending
2 Pith papers cite this work. Polarity classification is still indexing.
2
Pith papers citing it
citation-role summary
background 1
citation-polarity summary
fields
cond-mat.mes-hall 2years
2026 2verdicts
UNVERDICTED 2roles
background 1polarities
background 1representative citing papers
Near a valley level anti-crossing in a Si-MOS quantum dot, inter-valley spin coupling activates an electric-dipole transition that enhances the electron spin Rabi frequency.
citing papers explorer
-
Microscopic modeling of flopping-mode quantum dot spin qubits
A new microscopic model maps quantum dot device geometry directly to flopping-mode qubit parameters, reveals a tradeoff between fast electric driving and clean Rabi oscillations, and derives exchange coupling for capacitively coupled qubits.
-
Valley enhanced Rabi frequency in n-type planar Silicon-MOS quantum dot
Near a valley level anti-crossing in a Si-MOS quantum dot, inter-valley spin coupling activates an electric-dipole transition that enhances the electron spin Rabi frequency.