A new process of edge ion implantation followed by microwave annealing reduces leakage current at the sensor edges and shows promise for simpler active edge silicon detectors.
Dragone et al.,ePix: a class of architectures for second generation LCLS cameras,Journal of Physics: Conference Series493(2014) 012012
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Active Edge Silicon Sensors Fabricated With Edge Ion Implantation and Microwave Annealing for Dopant Activation
A new process of edge ion implantation followed by microwave annealing reduces leakage current at the sensor edges and shows promise for simpler active edge silicon detectors.