Proves an inf-sup stability estimate for a penalty-free asymmetric Nitsche method with Nédélec edge elements under an isolated patch condition on tetrahedral meshes.
Quasi-neutral Limit of the Drift Diffusion Models for Semiconductors: The Case of General Sign-Changing Doping Profile , volume =
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A Penalty-Free Asymmetric Nitsche's Method for Edge Elements
Proves an inf-sup stability estimate for a penalty-free asymmetric Nitsche method with Nédélec edge elements under an isolated patch condition on tetrahedral meshes.