A triple-stacked TZO/ITO/TZO channel gives thin-film transistors a 145 cm2/Vs saturation mobility, a 0.52 V threshold voltage, and an on/off ratio of 2×10^8 at 80°C.
P ‐16: The Research of Dual‐Layer Channel ITO/MZO Thin Film Transistors Fabricated on Glass at Low Temperature
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Improving Performance of Tin-Doped-Zinc-Oxide Thin-Film Transistors by Optimized Multi-Stacked Active-Layer Structures
A triple-stacked TZO/ITO/TZO channel gives thin-film transistors a 145 cm2/Vs saturation mobility, a 0.52 V threshold voltage, and an on/off ratio of 2×10^8 at 80°C.