DFT calculations find Si diffusion barriers in GaN of 3.2 eV to 9.9 eV by direction with experiments confirming negligible diffusion even at 1450°C and 1 GPa.
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Limited Diffusion of Silicon in GaN: A DFT Study Supported by Experimental Evidence
DFT calculations find Si diffusion barriers in GaN of 3.2 eV to 9.9 eV by direction with experiments confirming negligible diffusion even at 1450°C and 1 GPa.