HVPE-grown Si-doped β-Ga₂O₃ (010) films show mobilities up to 95 cm²/Vs, carrier densities 10^17-10^19 cm^{-3}, phase-pure structure by Raman and GIXS, and C-V/Hall agreement indicating potential for device-quality material.
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Optical and structural properties of Si doped $\beta$-Ga$_2$O$_3$ (010) thin films homoepitaxially grown by halide vapor phase epitaxy
HVPE-grown Si-doped β-Ga₂O₃ (010) films show mobilities up to 95 cm²/Vs, carrier densities 10^17-10^19 cm^{-3}, phase-pure structure by Raman and GIXS, and C-V/Hall agreement indicating potential for device-quality material.