In Ga-irradiated V2O3 micro-devices, lattice mismatch between irradiated and pristine regions creates self-strain that locally suppresses the metal-to-insulator transition, and the suppression location flips from edges to center as irradiation energy changes.
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Self-strain suppression of the metal-to-insulator transition in phase-change oxide devices
In Ga-irradiated V2O3 micro-devices, lattice mismatch between irradiated and pristine regions creates self-strain that locally suppresses the metal-to-insulator transition, and the suppression location flips from edges to center as irradiation energy changes.