InAs/EuS grown coherently; Fermi level sits in InAs conduction band and EuS gap; magnetic moments stay in EuS with a suppressed moment at the interface and no detectable induced InAs moment.
Figure S2 | The GPA dilatation and rotation maps along [002], [ 2-20], [1-1-1] and [-11-1] of the micrograph displayed in Figure 1a
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Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure
InAs/EuS grown coherently; Fermi level sits in InAs conduction band and EuS gap; magnetic moments stay in EuS with a suppressed moment at the interface and no detectable induced InAs moment.