MgO encapsulation of ZnO layers yields type-I and type-II band alignments with measured offsets that explain n-type conductivity and enhanced carrier confinement.
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Surface passivated and encapsulated ZnO atomic layer by high-$\kappa$ ultrathin MgO layer
MgO encapsulation of ZnO layers yields type-I and type-II band alignments with measured offsets that explain n-type conductivity and enhanced carrier confinement.