Experimental demonstration of Ge concentration modulations in Si quantum wells with periods from 2.00 nm to 0.49 nm (including at k0 and 2k0/3), characterized by X-ray and STEM showing high homogeneity and gradients up to 20 at-%/nm, with k·p simulations suggesting valley splitting enhancement in 2k
Running a six-qubit quantum circuit on a silicon spin qubit array,
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Theoretical expressions for singlet return probability in multivalley Si double quantum dots near spin-valley resonances are derived, accounting for valley occupations, and validated against experiments to map valley splittings and probe g-factor dependence.
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Sharp periodic Ge concentration modulations beyond the conduction band valley wavevector $k_0$ in nuclear spin-free Si quantum wells
Experimental demonstration of Ge concentration modulations in Si quantum wells with periods from 2.00 nm to 0.49 nm (including at k0 and 2k0/3), characterized by X-ray and STEM showing high homogeneity and gradients up to 20 at-%/nm, with k·p simulations suggesting valley splitting enhancement in 2k
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Singlet-triplet oscillations in multivalley Si double quantum dots
Theoretical expressions for singlet return probability in multivalley Si double quantum dots near spin-valley resonances are derived, accounting for valley occupations, and validated against experiments to map valley splittings and probe g-factor dependence.