Al2O3/TiO2-x memristors operate down to 1.5 K and exhibit a negative differential resistance at low temperature attributed to a Ti4O7 metal-insulator transition, yielding an ION/IOFF ratio of 84.
Study From Cryogenic to Hi gh Temperatures of the High - and Low - Resistance - State Currents of ReRAM Ni – HfO 2 – Si Capacitors,
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Observation of Highly Nonlinear Resistive Switching of Al2O3/TiO2-x Memristors at Cryogenic Temperature (1.5 K)
Al2O3/TiO2-x memristors operate down to 1.5 K and exhibit a negative differential resistance at low temperature attributed to a Ti4O7 metal-insulator transition, yielding an ION/IOFF ratio of 84.