Buffer-free pulsed laser deposition yields c-plane hexagonal Mn3Ge(0001) films on Si(100) that retain Kagome surface order, Weyl-like spectra, and an anomalous Hall effect up to 0.41 µΩ·cm at 2 K.
All these films were syn- thesized without using any metallic buffer layer from a single-source Mn rich target with a pulsed KrF excimer laser source of wavelength 248 nm [41]
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mes-hall 1years
2025 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Anomalous Hall effect in highly c-plane oriented Mn$_{3}$Ge/Si(100) thin films grown by pulsed laser deposition
Buffer-free pulsed laser deposition yields c-plane hexagonal Mn3Ge(0001) films on Si(100) that retain Kagome surface order, Weyl-like spectra, and an anomalous Hall effect up to 0.41 µΩ·cm at 2 K.