The moiré capacitor effect, an electrostatic imprinting of valence charge density, generates a ~10 meV moiré potential that stabilizes a C=1 Chern insulator and a ν=2/3 fractional Chern insulator in rhombohedral graphene/hBN.
This ensures that the filled Landau level is not prone to local instabilities, and furthermore limits the amount of band-mixing expected in theν= 2/3 FQH state
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The "Moir\'e Capacitor Effect" and Stabilization of Fractional Chern Insulators in Rhombohedral Graphene Superlattices
The moiré capacitor effect, an electrostatic imprinting of valence charge density, generates a ~10 meV moiré potential that stabilizes a C=1 Chern insulator and a ν=2/3 fractional Chern insulator in rhombohedral graphene/hBN.