Observation of temperature-independent anomalous Hall effect in 68 nm pure bismuth film from 15 mK to 300 K, proposed as intrinsic due to surface Berry curvature.
Anomalous Hall effect of light-driven three-dimensional Dirac electrons in bismuth
3 Pith papers cite this work, alongside 1 external citations. Polarity classification is still indexing.
abstract
Recent advancement in laser technology has opened the path toward the manipulation of functionalities in quantum materials by intense coherent light. Here, we study three-dimensional (3D) Dirac electrons driven by circularly polarized light (CPL), when the photon energy lies within the Dirac bands. As an experimental realization of this setup, we irradiate a thin film sample of elemental bismuth, which is a well-known semimetal hosting 3D Dirac electrons, with mid-infrared CPL. We successfully observe the emergence of the anomalous Hall effect (AHE) via terahertz Faraday rotation that is both pump-helicity-dependent and instantaneous. We compare our experimental findings with the results of Floquet theory, which is a powerful framework for analyzing the electronic band structure driven by coherent light. The contribution from the band structures near the one-photon resonant positions to the AHE shows a field-strength dependence consistent with our experimental results. The effective Hamiltonian on which we base our model calculations also implies that a pair of "double Weyl points" emerge due to the CPL-induced hybridization between the occupied and unoccupied 3D Dirac bands. Our findings shed light on ultrafast control of material properties in nonlinear topological optics.
representative citing papers
Circularly polarized light on Bi₂Se₃ generates four pairs of Floquet-Weyl points at one-photon resonance, with hole doping revealing a sharp anomalous Hall conductivity peak.
Experimental detection of anomalous Hall effect in thin bismuth films via transport measurements, interpreted as evidence for time-reversal symmetry breaking.
citing papers explorer
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Observation of Temperature Independent Anomalous Hall Effect in Thin Bismuth from Near Absolute Zero to 300 K Temperature
Observation of temperature-independent anomalous Hall effect in 68 nm pure bismuth film from 15 mK to 300 K, proposed as intrinsic due to surface Berry curvature.
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Floquet-Weyl states at one-photon resonances in three-dimensional topological insulators
Circularly polarized light on Bi₂Se₃ generates four pairs of Floquet-Weyl points at one-photon resonance, with hole doping revealing a sharp anomalous Hall conductivity peak.
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Anomalous Hall Effect in Thin Bismuth
Experimental detection of anomalous Hall effect in thin bismuth films via transport measurements, interpreted as evidence for time-reversal symmetry breaking.