Dangling-bond interface states, not just metal-induced gap states, control Fermi level pinning, and self-passivation via dimer reconstruction explains why silicon contacts pin less than germanium contacts.
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Self-passivation reduces the Fermi level pinning in the metal-semiconductor contacts
Dangling-bond interface states, not just metal-induced gap states, control Fermi level pinning, and self-passivation via dimer reconstruction explains why silicon contacts pin less than germanium contacts.