Explicit analytical model for DC characteristics of ultra-thin gate-all-around junctionless nanowire FETs with 2D quantum confinement, validated by TCAD simulations across operating regions.
An alytical model for ultra-thin body junctionless symmetric double gate mos fets in subthreshold regime
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An Explicit Model for Ultra-thin Gate-All-Around Junctionless Nanowire FETs, Including 2D Quantum Confinement
Explicit analytical model for DC characteristics of ultra-thin gate-all-around junctionless nanowire FETs with 2D quantum confinement, validated by TCAD simulations across operating regions.