Simulation study of EBL-free AlInN nanowire DUV LEDs reports higher IQE without droop up to 1500 A/cm2 and strong TM polarization versus AlGaN devices.
226 nm AlGaN/Al N UV LEDs using p-type Si for hole injection and UV reflection
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Design and characteristic study of electron blocking layer free AlInN nanowire deep ultraviolet light-emitting diodes
Simulation study of EBL-free AlInN nanowire DUV LEDs reports higher IQE without droop up to 1500 A/cm2 and strong TM polarization versus AlGaN devices.