Acoustic measurements on n-InSb quantum wells reveal a parallel shunting layer, enabling separation of conduction channels and determination of the electron g-factor via the coincidence technique.
High-frequency transport in p-type Si/SiGe heterostructures studied with surface acoustic waves in the quantum hall regime
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AC Conductance in n-InSb Structures with Quantum Well. Acoustic Studies
Acoustic measurements on n-InSb quantum wells reveal a parallel shunting layer, enabling separation of conduction channels and determination of the electron g-factor via the coincidence technique.