InAs/EuS grown coherently; Fermi level sits in InAs conduction band and EuS gap; magnetic moments stay in EuS with a suppressed moment at the interface and no detectable induced InAs moment.
The nominal sample structure for the RXRR measurements is As (20 nm)/EuS (2.5 nm)/InAs (15 nm)/GaSb (bulk)
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Coherent Epitaxial Semiconductor-Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure
InAs/EuS grown coherently; Fermi level sits in InAs conduction band and EuS gap; magnetic moments stay in EuS with a suppressed moment at the interface and no detectable induced InAs moment.