Heavily doped GaN films on Si exhibit low-loss ENZ and NZI regions in the mid-IR up to 3 μm, with plasmon-phonon hybridization producing a flat-dispersion high-energy mode pinned near the plasma frequency.
et al, Monroy, E., Journal of Physics D: Applied Physics 2016, 49
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GaN mid-IR plasmonics: low-loss epsilon-near-zero modes
Heavily doped GaN films on Si exhibit low-loss ENZ and NZI regions in the mid-IR up to 3 μm, with plasmon-phonon hybridization producing a flat-dispersion high-energy mode pinned near the plasma frequency.