CBVB-nH complexes (n=0-3) are energetically favorable in MOVPE-grown hBN due to electrostatic attraction and match observed 1.90 eV and 2.24 eV emission peaks via hole capture.
The Enthalpy of Formation of Hexagonal Boron Nitride
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CBVB-nH complexes as prevalent defects in metal-organic vapor-phase epitaxy-grown hexagonal boron nitride
CBVB-nH complexes (n=0-3) are energetically favorable in MOVPE-grown hBN due to electrostatic attraction and match observed 1.90 eV and 2.24 eV emission peaks via hole capture.