Silicon(111) exposed to ethylene at 800 C converts progressively to 3C-SiC, from isolated islands to a roughly 9 nm layer with residual elemental silicon and voids.
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Time-resolved study of carbonization and growth of ultrathin 3C-SiC on Si(111) under ultra-high vacuum
Silicon(111) exposed to ethylene at 800 C converts progressively to 3C-SiC, from isolated islands to a roughly 9 nm layer with residual elemental silicon and voids.