In telecom-band InGaAs/GaAs quantum dots, the s-p splitting decreases as emission energy increases, and 8-band k·p simulations attribute this inverse trend to indium content rather than dot size.
Shor, SIAM J
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mes-hall 1years
2019 1verdicts
CONDITIONAL 1representative citing papers
citing papers explorer
-
Interplay between emission wavelength and s-p splitting in MOCVD-grown InGaAs/GaAs quantum dots emitting above 1.3 {\mu}m
In telecom-band InGaAs/GaAs quantum dots, the s-p splitting decreases as emission energy increases, and 8-band k·p simulations attribute this inverse trend to indium content rather than dot size.