Single T centres epitaxially grown in silicon-on-insulator via MBE achieve 30 MHz homogeneous linewidths coupled to nanophotonic waveguides, a ten-fold improvement over implanted references.
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Epitaxial single T centres in silicon-on-insulator
Single T centres epitaxially grown in silicon-on-insulator via MBE achieve 30 MHz homogeneous linewidths coupled to nanophotonic waveguides, a ten-fold improvement over implanted references.