Atomic-scale order at β-Ga₂O₃/4H-SiC interfaces preserves phonon coherence and enables record thermal boundary conductance of 231 MW m^{-2} K^{-1}.
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Atomic-scale order enables high thermal boundary conductance at $\beta$-Ga$_2$O$_3$/4H-SiC interfaces
Atomic-scale order at β-Ga₂O₃/4H-SiC interfaces preserves phonon coherence and enables record thermal boundary conductance of 231 MW m^{-2} K^{-1}.