Low-field electron and hole mobilities in silicon decrease by ~60% at fluences of 6e17 cm^{-2} expected for FCC-hh inner detector layers.
Li,Modeling and simulation of neutron induced changes and temperature annealing of Neff and changes in resistivity in high resistivity silicon detectors,NIMA,342 (1)(1994), pp
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Low-field carrier mobilities in silicon irradiated to extreme fluences
Low-field electron and hole mobilities in silicon decrease by ~60% at fluences of 6e17 cm^{-2} expected for FCC-hh inner detector layers.