The metal-insulator transition survives inside sub-10-nm Cr-doped V2O3 nanocrystals despite growth of an insulating surface dead layer.
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Tensor-network study of the extended Hubbard model shows an analytical DH-pair formula predicts energy increase rates well but requires exciton energy as effective gap when V induces excitons.
DMFT+H calculations on the TBG 8-band model produce resistive states at integer fillings and cascades in optical conductivity with doping-dependent Drude weight and scattering rate resets.
citing papers explorer
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Robust Metal-Insulator Transition Despite Surface Dead-Layer Growth in Sub-10-nm Cr-Doped V2O3 Nanocrystals
The metal-insulator transition survives inside sub-10-nm Cr-doped V2O3 nanocrystals despite growth of an insulating surface dead layer.
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Charge creation via quantum tunneling in one-dimensional Mott insulators: A numerical study of the extended Hubbard model
Tensor-network study of the extended Hubbard model shows an analytical DH-pair formula predicts energy increase rates well but requires exciton energy as effective gap when V induces excitons.
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Cascades in transport and optical conductivity of Twisted Bilayer Graphene
DMFT+H calculations on the TBG 8-band model produce resistive states at integer fillings and cascades in optical conductivity with doping-dependent Drude weight and scattering rate resets.