BaCd2P2 exhibits photoconductive properties and defect tolerance comparable to GaAs despite low-purity synthesis, supported by lifetime measurements and first-principles defect calculations.
Temperature dependence of carrier capture by defects in gallium arsenide
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BaCd2P2: a promising impurity-tolerant counterpart of GaAs for photovoltaics
BaCd2P2 exhibits photoconductive properties and defect tolerance comparable to GaAs despite low-purity synthesis, supported by lifetime measurements and first-principles defect calculations.