An improved magnetotransport model applied to surface-conducting H-diamond devices shows orbital magnetoresistance dominates high-field behavior while local hole mobilities reach 1000-3000 cm2/Vs.
Ley, Preparation of Low Index Single Crystal Diamond Surfaces for Surface Science Studies, Diam
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High-field Magnetotransport Studies of Surface Conducting Diamonds
An improved magnetotransport model applied to surface-conducting H-diamond devices shows orbital magnetoresistance dominates high-field behavior while local hole mobilities reach 1000-3000 cm2/Vs.