Proposes quantum-dot arrays in bilayer graphene as a platform for tunable valley-dependent electron optics via layer-antisymmetric gating and multiple-scattering analysis.
Title resolution pending
3 Pith papers cite this work. Polarity classification is still indexing.
representative citing papers
In bilayer graphene junctions, the onset of propagation of the high-energy band inside a barrier creates a kink in the conductance at E≈V0+γ1, and strain shifts the angle where transmission is suppressed.
Moving an electromagnetic potential step at near-light speed lowers the voltage threshold for Klein tunneling by up to four orders of magnitude.
citing papers explorer
-
Valley-dependent electron optics using quantum dots in bilayer graphene
Proposes quantum-dot arrays in bilayer graphene as a platform for tunable valley-dependent electron optics via layer-antisymmetric gating and multiple-scattering analysis.
-
Mode-Resolved Multiband Ballistic Transport and Conductance Thresholds in Bilayer Graphene Junctions
In bilayer graphene junctions, the onset of propagation of the high-energy band inside a barrier creates a kink in the conductance at E≈V0+γ1, and strain shifts the angle where transmission is suppressed.
-
Access to Klein Tunneling via Space-Time Modulation
Moving an electromagnetic potential step at near-light speed lowers the voltage threshold for Klein tunneling by up to four orders of magnitude.