Field-free, all-electric writing of a van der Waals magnetoresistive memory at room temperature is achieved in TaIrTe4/Fe3GaTe2 by current-induced orbital magnetization tied to the Berry curvature dipole.
For a time-reversal symmetric system with broken inversion symmetry, the second-order nonlinear Hall effect can be originated from BCD
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Room-temperature van der Waals magnetoresistive memories with data writing by orbital current in the Weyl semimetal TaIrTe4
Field-free, all-electric writing of a van der Waals magnetoresistive memory at room temperature is achieved in TaIrTe4/Fe3GaTe2 by current-induced orbital magnetization tied to the Berry curvature dipole.