Presents a DFNG model for ferroelectric domain nucleation and growth under arbitrary voltage waveforms to enable predictive materials-to-circuit co-design.
Nominally ฮ๐๐โค 5% is acceptable for memory device such as FeRAM (ferroelectric random-access memory), and ฮ๐๐โค 1% for CiM devices as they encounter more frequent write operations
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Ferroelectric dynamic-field-driven nucleation and growth model for predictive materials-to-circuit co-design
Presents a DFNG model for ferroelectric domain nucleation and growth under arbitrary voltage waveforms to enable predictive materials-to-circuit co-design.