Quantum dots formed between polysilicon gates in a commercial 22 nm FDSOI CMOS process, with bias triangle pairs and a single-electron box sensor detecting charge transitions.
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Commercial CMOS Process for Quantum Computing: Quantum Dots and Charge Sensing in a 22 nm Fully Depleted Silicon-on-Insulator Process
Quantum dots formed between polysilicon gates in a commercial 22 nm FDSOI CMOS process, with bias triangle pairs and a single-electron box sensor detecting charge transitions.