Buried TiN bottom gates with 60 nm pitch, made by trench filling and mechanical polishing, electrostatically define quantum dots in InAs nanowires, showing Coulomb blockade at cryogenic temperatures.
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Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates
Buried TiN bottom gates with 60 nm pitch, made by trench filling and mechanical polishing, electrostatically define quantum dots in InAs nanowires, showing Coulomb blockade at cryogenic temperatures.