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3 Pith papers cite this work. Polarity classification is still indexing.

3 Pith papers citing it

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2025 3

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UNVERDICTED 3

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General Many-Body Perturbation Framework for Moir\'e Systems

cond-mat.str-el · 2025-09-24 · unverdicted · novelty 6.0

A GW+RPA perturbation framework built on Hartree-Fock is applied to hBN-aligned rhombohedral pentalayer graphene and magic-angle twisted bilayer graphene, producing phase diagrams and spectra that match experiments and predicting a nematic metal ground state at charge neutrality in MATBG.

Various electronic crystal phases in rhombohedral graphene multilayers

cond-mat.mes-hall · 2025-12-28 · unverdicted · novelty 5.0

Rhombohedral graphene multilayers show an isospin cascade of electron crystal phases with non-zero Chern numbers and nearly degenerate topological states hosting extended quantum anomalous Hall effect as carrier density rises.

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Showing 3 of 3 citing papers.

  • Emergence of Topological Electron Crystals in Bilayer Graphene--Mott Insulator Heterostructures cond-mat.mes-hall · 2025-12-28 · unverdicted · none · ref 17

    Interlayer attraction in bilayer graphene-Mott insulator heterostructures stabilizes topological electron crystals with triangular, honeycomb, and kagome geometries via self-consistent Hartree-Fock calculations.

  • General Many-Body Perturbation Framework for Moir\'e Systems cond-mat.str-el · 2025-09-24 · unverdicted · none · ref 45

    A GW+RPA perturbation framework built on Hartree-Fock is applied to hBN-aligned rhombohedral pentalayer graphene and magic-angle twisted bilayer graphene, producing phase diagrams and spectra that match experiments and predicting a nematic metal ground state at charge neutrality in MATBG.

  • Various electronic crystal phases in rhombohedral graphene multilayers cond-mat.mes-hall · 2025-12-28 · unverdicted · none · ref 20

    Rhombohedral graphene multilayers show an isospin cascade of electron crystal phases with non-zero Chern numbers and nearly degenerate topological states hosting extended quantum anomalous Hall effect as carrier density rises.