A binary BCF model with X-ray CTR data defines and quantitatively predicts a kinetically controlled condensation boundary for indium incorporation in InGaN epitaxial growth.
Title resolution pending
1 Pith paper cite this work. Polarity classification is still indexing.
1
Pith paper citing it
fields
cond-mat.mtrl-sci 1years
2026 1verdicts
UNVERDICTED 1representative citing papers
citing papers explorer
-
Kinetically Controlled Condensation Boundary Governing Indium Incorporation in InGaN Metal Organic Vapor Phase Epitaxy
A binary BCF model with X-ray CTR data defines and quantitatively predicts a kinetically controlled condensation boundary for indium incorporation in InGaN epitaxial growth.