A transfer-matrix calculation predicts gate-tunable, sign-switching magnetoresistance in a double-gated, double-magnetized topological insulator surface with hexagonal warping, reaching about -170% for double barriers and +60% for double wells.
We shall assume the Fermi level lies in the upper band ( s = +1)
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Surface state transport in double-gated and magnetized topological insulators with hexagonal warping effects
A transfer-matrix calculation predicts gate-tunable, sign-switching magnetoresistance in a double-gated, double-magnetized topological insulator surface with hexagonal warping, reaching about -170% for double barriers and +60% for double wells.