Synchronized same-polarity square-wave gates on a simulated graphene/hBN channel produce complementary ON/OFF valley-polarized currents at finite bias.
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Graphene/hBN heterostructure based Valley transistor: Dynamic Control of valley current in synchronized nonzero voltages, within the time-dependent regime
Synchronized same-polarity square-wave gates on a simulated graphene/hBN channel produce complementary ON/OFF valley-polarized currents at finite bias.