In Eu-doped GaN, red emission efficiency is limited at low excitation by a competitive carrier trap and at high excitation by the small number and small cross-section of efficient Eu sites, with peak external quantum efficiency near 46 to 48 percent at low temperature.
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Excitation efficiency and limitations of the luminescence of Eu3+ ions in GaN
In Eu-doped GaN, red emission efficiency is limited at low excitation by a competitive carrier trap and at high excitation by the small number and small cross-section of efficient Eu sites, with peak external quantum efficiency near 46 to 48 percent at low temperature.