Inverse-designed doped-silicon heater reduces thermal gradient from 110 K to 25 K at ~1000 K and delivers a 10-fold increase in active Sb2S3 switching area within a compact 26x26 μm footprint.
Non-volatile phase-change materials for programmable photonics,
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Inverse designed resistive heaters for uniform switching of Phase Change Materials
Inverse-designed doped-silicon heater reduces thermal gradient from 110 K to 25 K at ~1000 K and delivers a 10-fold increase in active Sb2S3 switching area within a compact 26x26 μm footprint.