The authors report photon emission gain in reverse-biased Er-doped Si LEDs and claim the gain equals the electroluminescence-region width divided by the electron mean free path.
Kenyon, Erbium in silicon, Semiconductor Science and Technology, 20, R65 (2005)
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Photon emission gain in Er doped Si light emitting diodes by impact excitation
The authors report photon emission gain in reverse-biased Er-doped Si LEDs and claim the gain equals the electroluminescence-region width divided by the electron mean free path.