LaAg2Ge2 thin films show 22.5% positive magnetoresistance at 9 T and twofold anisotropic angle-dependent magnetoresistance with field-independent dip/peak features, captured by a high-mobility electron two-carrier model.
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Anisotropic multiband magnetotransport in LaAg$_2$Ge$_2$ thin films
LaAg2Ge2 thin films show 22.5% positive magnetoresistance at 9 T and twofold anisotropic angle-dependent magnetoresistance with field-independent dip/peak features, captured by a high-mobility electron two-carrier model.