Irradiation of Si, SiO2, and Si3N4 by silicon tri-halide ions yields more etching per ion than halogen ions alone, while silicon mono-halide and Si+ ions deposit silicon at low energies.
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Beam experiments for reactive ion etching of silicon (Si)-based materials by silicon halide ions
Irradiation of Si, SiO2, and Si3N4 by silicon tri-halide ions yields more etching per ion than halogen ions alone, while silicon mono-halide and Si+ ions deposit silicon at low energies.