Oxygen-ion implantation in 4H-SiC yields four types of oxygen-vacancy complexes that comprise over 90% of defects, show superior optical and spin properties, and are identified by isotope-resolved hyperfine interactions.
U., Karhu, R., Ivanov, I
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High-yield engineering and identification of oxygen-related modified divacancies in 4H-SiC
Oxygen-ion implantation in 4H-SiC yields four types of oxygen-vacancy complexes that comprise over 90% of defects, show superior optical and spin properties, and are identified by isotope-resolved hyperfine interactions.